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> End of lithography at 32 nm?, *
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Posted: Feb 21 2006, 07:43 AM


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Apparently unanswered question today: http://www.eetimes.com/news/semi/showArtic...cleID=180204904
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guiding_light
Posted: Jun 19 2006, 03:34 AM


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QUOTE
The number of photons absorbed is also a function of depth in the photoresist. Hence by the same argument, the shot noise roughness should be worse at the bottom of a photoresist trench or hole, since fewer photons make it there.


Largest dose to size in literature is 36.8 mJ/cm^2. That's 25 photons/nm^2. 125 nm photoresist thickness. Apply the exponential attenuation. You see the picture.
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mfp in Cu
Posted: Jul 17 2006, 12:38 PM


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The mean free path of an electron with Fermi energy of 7 eV in copper is ~39 nm.

http://hyperphysics.phy-astr.gsu.edu/hbase.../ohmmic.html#c2

What does that mean? It seems awfully a long distance (expecting a few nm or so).
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guiding_light
Posted: Jul 18 2006, 02:49 PM


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QUOTE
The mean free path of an electron with Fermi energy of 7 eV in copper is ~39 nm.

http://hyperphysics.phy-astr.gsu.edu/hbase.../ohmmic.html#c2

What does that mean? It seems awfully a long distance (expecting a few nm or so).


The related links at that site give additional info. The mean free path is long because there is very little electron scattering into states close to the Fermi level. The electric field probably gives micro-eV energy difference. This is already smaller than thermal excitation (~0.026 eV at room temperature).

Impact ionization (which generates secondary electrons from primary ones) involves energy differences at least on the order of the Fermi energy, so for metals, the mean free path is small, but for insulators, where the density of states is much less, the mean free path is also large (observed to be > 10-20 nm).
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guiding_light
Posted: Jul 19 2006, 01:03 AM


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McCord and Pease, JVST B vol. 6, p. 293-296 (1988).

Apparently 20 eV electrons from an STM can go through 20 nm PMMA.
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guiding_light
Posted: Jul 19 2006, 05:24 AM


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http://www.cs.vu.nl/~nsilvis/microeng.pdf

Figure 3 shows spread of secondary-electron driven contamination growth. 20 nm spread at the surface is already visible.
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eh
Posted: Jul 20 2006, 06:23 AM


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http://scitation.aip.org/getabs/servlet/Ge...=cvips&gifs=Yes

More data from X-ray exposure on gold substrate.

The electrons seemed to move 50 nm from the resist-substrate interface into the resist.

These are mostly the secondary electrons (<10 eV) which have longest mean free path as well.
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Neil Farbstein
  Posted: Jul 30 2006, 05:51 AM


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QUOTE (John Larkin @ Aug 23 2004, 07:21 PM)
Or just admit that something in the 40 nm range is as far as ICs are
going to go, Moore's Law has at last hit the wall, and who needs 100
billion transistors on a chip anyhow?

John

You dont want a really powerful computer that can design an engine that never knocks or breaks down. If you hit the wall you're going to get hurt John.


--------------------
Life is a tale told by an idiot full of sound and fury; signifying nothing...Tomorrow and tomorrow and tomorrow, but tomorrow never comes. -William Shakespeare.
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fivedoughnut
  Posted: Jul 30 2006, 06:25 AM


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Has anyone thought of going 3-D?......We now have the technology for 3-D printing why not apply it to processors?...although cooling these buggers will need a little imagination.
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3D is here
Posted: Jul 31 2006, 01:40 PM


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3D technology already being used through chip stacking. Maybe it's a cheat but definitely more transistors per unit area.
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not the end I hope
Posted: Aug 5 2006, 03:58 PM


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ASML Holding NV has debuted what it says is the chip industry's most advanced lithography system, the ASML TWINSCAN XT:1900i, set to ship in mid-2007.

In combination with low k1 capabilities, ASML said that its new next-generation 193nm immersion lithography system extends optical lithography for volume production to 40nm and below. The company added that the system delivers a new industry numerical aperture (NA) benchmark of 1.35, the near practical limit for water-based immersion technology...

...the XT:1900i will specifically enable volume production for logic devices down to 32nm and memory devices at 40nm and below...
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guiding_light
Posted: Aug 9 2006, 01:19 AM


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ASML Holding NV has debuted what it says is the chip industry's most advanced lithography system, the ASML TWINSCAN XT:1900i, set to ship in mid-2007.

In combination with low k1 capabilities, ASML said that its new next-generation 193nm immersion lithography system extends optical lithography for volume production to 40nm and below. The company added that the system delivers a new industry numerical aperture (NA) benchmark of 1.35, the near practical limit for water-based immersion technology...

...the XT:1900i will specifically enable volume production for logic devices down to 32nm and memory devices at 40nm and below...


Obviously ASML wants to score as much revenue as possible from this tool.
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guiding_light
Posted: Nov 30 2007, 02:40 PM


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game over.
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