IMEC proposes GaAs on Ge on Silicon, This is to extend CMOS below 65 nm| LoFi version for PDAs |
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IMEC proposes GaAs on Ge on Silicon, This is to extend CMOS below 65 nm| plasma_guy |
Posted: Oct 26 2005, 09:42 AM
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Member  Group: Power Member Posts: 139 Joined: 29-July 05 Positive Feedback: 33.33% Feedback Score: 1  |
IMEC has proposed using gallium arsenide on germanium on silicon to help support the use of high-k gate dielectric materials.
This is to help meet the ITRS EOT spec of 0.7 nm at the 45 nm node. |
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