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Semiconductor, doping | brad sue |
Posted: Feb 26 2011, 01:39 AM
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Newbie  Group: Power Member Posts: 41 Joined: 12-September 05 Positive Feedback: 100% Feedback Score: 1  |
hi, i would like to have some help with this problem:
Silicon is doped with 10^16 phosphorus atoms/cm^3. At what temperature would the hole concentration be equal to 10% of the ionized impurity concentration? I think I can use the equation for Nd+= Nd x e(-(Ef-Ed)/KT), where Nd+ is the ionized donor concentration, Nd is the donor concentration, Ef the fermi level, Ed the donor energy. I am not sure I am using the good equation, then I dont know how to find the Ef and Ed . i was not able to find or dont understand how to get the Ef and Ed. thank you brad |
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| brad sue |
Posted: Feb 26 2011, 07:46 PM
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Newbie Group: Power Member Posts: 41 Joined: 12-September 05 Positive Feedback: 100% Feedback Score: 1 |
Please can I have any suggestions ?
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